Mo2D-3 : Parasitic Model to Describe Breakdown in Stacked-FET SOI Switches
A simple passive capacitance model has been optimized to predict breakdown in a stacked SOI FET. Specifically, as the number of FETs in a switch increases, an equivalent increase in breakdown is not seen in hardware; instead, the breakdown performance saturates as the number of stacks in the FET increases. This phenomenon is not predicted by the FET foundry model. This work is focused on FETs for RF switches in flip chip topologies. As a result of this work, the different components that contribute to off-state capacitances were also described which is important for model development and accuracy.

Mo1B-2 : A 77GHz 8RX3TX Transceiver for 250m Long Range Automotive Radar in 40nm CMOS Technology
This paper presents a fully integrated 77 GHz transceiver for long range automotive radar with a 2 × 8 time-division-multiplexing multi-input multi-output (TDM-MIMO) technique in 40 nm CMOS technology. The MMIC integrates an 8-channel receiver (RX), a 3-channel transmitter (TX), a phase locked loop (PLL), a TX power detector and a power calibration loop, an SRAM, an eFuse, a temperature compensation calibration loop with look up table (LUT) and a temperature sensor, a serial peripheral interface (SPI), and a MIMO control logic. The RX shows noise figure (NF) of 8.7 dB and input-referred 1 dB compression point (IP1dB) of -7.4 dBm. The RX with the worst condition shows NF of 14 dB and IP1dB of -10 dBm. The TX shows output power of 14.1 dBm and phase noise of -116 dBc/Hz at 12.5 MHz offset frequency. The radar module demonstrates the detection range of 250 m.

Mo1B-5 : 77GHz CMOS Built-In Self-Test with 72dB C/N and Less Than 1ppm Frequency Tolerance for a Multi-Channel Radar Application
A built-in self-test (BIST) system with 72 dB C/N and less than 1 ppm frequency tolerance of down-converted BIST tone for a multi-channel radar application is presented. The BIST consists of a frequency doubler, an up-conversion mixer, a variable gain amplifier, a phase shifter, 8-way splitter and an RF GSG PAD coupler for BIST signal distribution. The proposed up-conversion mixer can operate from 76 to 77 GHz, mixing with arbitrary offset frequencies from 600 kHz to 42.7 MHz generated by a fully-synchronized PLL. The proposed mixer can cope with a through mode for testability and flexibility improvements as well. Measured relative phase among all of 8 channels were less than 2 degrees from -25°C to 150°C through on-chip 12-bit ADCs. The proposed BIST was fabricated in a 40 nm CMOS process and assembled with a wafer level chip sized package (WLCSP).

Mo1B-3 : High Resolution CMOS IR-UWB Radar for Non-Contact Human Vital Signs Detection
This paper presents an impulse radio ultra-wideband radar transceiver chip for monitoring human vital signs, featuring a spectrum adjustable transmitter and equivalent time sampling based receiver. The radar receiver samples the echo signal at 20.48 GS/s, which corresponds to a 7.4 mm range resolution using high-speed track and hold sampler. The received pulses are added up to increase the SNR of the receiver. With the proposed pseudo 16-bit DAC, an embedded DC-offset cancellation circuit can improve the dynamic range of the receiver according to the gain of integrator. Respiration and heartbeat of humans were detected by the proposed UWB radar transceiver, while consuming 55.2 mW from 1.2 V power supply. The radar transceiver chip was implemented in a 130 nm CMOS technology occupying a chip area of 5.04 mm².

Mo2B-3 : A D-Band Radio-on-Glass Module for Spectrally-Efficient and Low-Cost Wireless Backhaul
D-Band Radio-on-Glass (RoG) modules combining two highly integrated SiGe BiCMOS transceivers (TRX) with a record low-loss glass interposer technology are presented. The ICs operate at 115–155 GHz (Low-Band) and 135–170 GHz (High-Band). In this frequency range, a transmitter Psat up to 13 dBm and an average receiver NF of 8.5 dB is achieved. The integrated module supports TX constellations up to 512-QAM (2.2% EVM at 2 dBm output, 145 GHz) and data-rates up to 42 Gb/s (128-QAM). Measurements mimicking a 250-meter wireless-link demonstrate a maximum data-rate of 36 Gb/s using 64-QAM. The RoG modules represent the first low-cost and highly integrated solution for spectrally efficient backhaul systems in D-Band.

Mo3A-1 : 3D Imaging Using mmWave 5G Signals
The ability to create and steer beams, and the availability of large bandwidths have opened up the possibility of using mmWave 5G networks for radar-like sensing applications. In this paper, we introduce a signal processing pipeline that is able to process reflected OFDM-based communications waveforms and create radar images without affecting communications protocols or data throughput. An experimental demonstration system for this concept comprising a prototype basestation transmitter and an auxiliary imaging receiver is also presented. These two components are implemented with Si-based 28-GHz, 64-element phased array transceiver modules and software-defined radios. Measurement results show 3D radar images of indoor scenes with 2° angular and 15 cm ranging resolution using 5G-like communications waveforms at 28-GHz, without any effect on communication functionality.

Mo2A-2 : A Reconfigurable SOI CMOS Doherty Power Amplifier Module for Broadband LTE High-Power User Equipment Applications
A reconfigurable broadband Doherty PA module for LTE HPUE (High Power User Equipment) applications is presented, which is the first to be based on an SOI-CMOS PA without predistortion and supply modulation. The PA die (1.3×1.7mm²) is fabricated in a 130nm SOI-CMOS process and assembled, using flip-chip, on a 3.2×3.7mm² laminate package. From 1.9GHz to 2.7GHz, the PA provides 28dBm of output power (Pout) under 3.4V supply voltage (Vdd), with a PAE higher than 35% and an E-UTRA ACLR lower than -35dBc when using a 10MHz-50RB QPSK LTE uplink signal, without predistortion. At 2.3GHz, the proposed PA achieves 43.5% of PAE and -39.6dBc of ACLR at 28dBm of Pout. When operating at Vdd=5V (HPUE mode), the PA reaches a saturated power of 4W with a maximum PAE of 57% and delivers a Pout of 31dBm with 42.6% of PAE and -35.7dBc of ACLR using a 20MHz-100RB QPSK LTE signal.

Mo4A-2 : Spatio-Temporal Filtering: Precise Beam Control Using Fast Beam Switching
This paper presents a spatio-temporal filtering approach for beamforming with phased arrays. The approach takes advantage of fast beam switching in modern Si-integrated phased arrays enabled by integrated digital circuits. The key technique involves fast switching among spatial beams created using the phased array. The resulting time-averaged beam represents a new spatial filter that might not have been feasible using the phase and gain control resolution available in the phased array. We present the underlying theory, and perform extensive system measurements on a software defined phased array radio based on state-of-the-art 28GHz phased array ICs. We demonstrate three use cases of spatio-temporal beam control in measurement: a) side lobe reduction, b) multi-armed beam formation and c) null pointing. We demonstrate how this approach can enable high precision beam control even in systems with limited phase shifter resolution and/or systems without any gain control per antenna element.

Mo3A-4 : Fully Autonomous System-on-Board with Complex Permittivity Sensors and 60GHz Transmitter for Biomedical Implant Applications
This paper presents a system on board (SoB) solution intended for fully autonomous implantable continuous monitoring of biomaterials. The proposed SoB is built around a packaged highly-integrated chip, which comprises two capacitive resonant-tank-based complex permittivity dielectric sensors operating in K-band, temperature sensor, wakeup timer, finite state machine (FSM), serial peripheral interface (SPI), ADC and a 60 GHz transmitter. Wakeup timer is used to turn on the 1.5 V power domain regularly every 8.9 min, which stays “on” only for 4.2 ms. During this time the FSM implements the fully autonomous functionality of the system by running a pre-defined sequence, performing the sensor measurements and forwarding the data to transmitter. The sensor data is read via SPI, buffered and transmitted outside of the implant as a Manchester coded BPSK sequence modulated onto a 60 GHz carrier. The chip is realized in a 130 nm BiCMOS process and packaged using a flip-chip ball-grid array technology. To save chip area, the 60 GHz antenna is realized in the redistribution layer (RDL) of the package. The SoB additionally comprises an external PLL, low-dropout regulators and external reference oscillator. The size of the SoB module is only 18 mm × 14 mm. It can operate up to 233 days from a small 3.7 V LiPo 95 mAh battery. The functionality is verified in measurement by monitoring the fully autonomous sequence. Next, biological materials are applied to the sensor, modulated values are transmitted and demodulated using an external 60 GHz down-converter and digital Costas loop. Finally, isopropanol-water solutions are applied in 25% concentration change steps and demodulated complex permittivity values are evaluated.